for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 hmc617lp3 / 617lp3e gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz v02.0610 general description features functional diagram the h m c617 lp 3( e ) is a gaas p h em t mmi c l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 550 and 1200 m hz. the amplifer has been optimized to provide 0.5 db noise fgure, 16 db gain and +37 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling components. the h m c617 lp 3( e ) shares the same package and pinout with the h m c618 lp 3( e ) 1.7 - 2.2 ghz l na. the h m c617 lp 3( e ) can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l na for each application. the h m c617 lp 3( e ) offers improved noise fgure versus the previously released h m c372 lp 3( e ) and the h m c376 lp 3( e ). noise f igure: 0.5 db gain: 16 db o utput ip 3: +37 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 16 l ead 3x3mm q fn p ackage: 9 mm 2 typical applications the h m c617 lp 3( e ) is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? p ublic s afety r adio ? access p oints electrical specifcations, t a = +25 c, rbias = 3.92k ohms* p arameter vdd = +3 vdc vdd = +5 vdc units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 698 - 960 550 - 1200 698 - 960 550 - 1200 m hz gain 13 16 11 15 13.5 16 11.5 16 db gain variation o ver temperature 0.003 0.003 0.005 0.005 db/ c noise f igure 0.5 0.8 0.5 1.1 0.55 0.85 0.6 1.1 db i nput r eturn l oss 28 22 22 17 db o utput r eturn l oss 12 14 12 15 db o utput p ower for 1 db compression ( p 1db) 14 16 12.5 16 18.5 21 16.5 20 dbm s aturated o utput p ower ( p sat) 17 16.5 21 20.5 dbm o utput third o rder i ntercept ( ip 3) 31 30 37 37 dbm s upply current ( i dd) 30 45 30 45 88 115 88 115 ma * r bias resistor sets current, see application circuit herein
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss [1] [2] -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 vdd=5v vdd=3v response (db) frequency (ghz) s21 s22 s11 -30 -25 -20 -15 -10 -5 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c return loss (db) frequency (ghz) hmc617lp3 / 617lp3e v02.0610 gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz [1] vdd = 5v, r bias = 3.92k [2] vdd = 3v, r bias = 3.92k gain vs. temperature [2] 10 12 14 16 18 20 22 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c - 40c gain (db) frequency (ghz) gain vs. temperature [1] 10 12 14 16 18 20 22 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25c +85c - 40c gain (db) frequency (ghz) reverse isolation vs. temperature [1] -30 -25 -20 -15 -10 -5 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c -40 c isolation (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature [1] [2] psat vs. temperature [1] [2] 10 12 14 16 18 20 22 24 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c -40 c psat (dbm) frequency (ghz) vdd=5v vdd=3v 10 12 14 16 18 20 22 24 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) vdd=3v vdd=5v hmc617lp3 / 617lp3e v02.0610 gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz output ip3 and idd vs. supply voltage @ 700 mhz [3] [1] vdd = 5v, r bias = 3.92k [2] vdd = 3v, r bias = 3.92k [3] r bias = 3.92k [4] m easurement reference plane shown on evaluation p cb drawing. output ip3 vs. temperature [1] [2] 24 28 32 36 40 44 48 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz) vdd=5v vdd=3v 26 28 30 32 34 36 38 40 0 20 40 60 80 100 120 140 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) noise figure vs. temperature [1] [2] [4] 0 0.2 0.4 0.6 0.8 1 1.2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vdd=5v vdd=3v noise figure (db) frequency (ghz) +85c +25 c -40c output ip3 and idd vs. supply voltage @ 900 mhz [3] 26 28 30 32 34 36 38 40 0 20 40 60 80 100 120 140 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 power compression @ 900 mhz [1] -10 0 10 20 30 40 50 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) hmc617lp3 / 617lp3e v02.0610 gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz -10 0 10 20 30 40 50 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) power compression @ 900 mhz [2] power compression @ 700 mhz [1] -10 0 10 20 30 40 50 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 40 50 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) power compression @ 700 mhz [2] [1] vdd = 5v, r bias = 3.92k [2] vdd = 3v, r bias = 3.92k [3] r bias = 3.92k gain, power & noise figure vs. supply voltage @ 700 mhz [3] 16 20 24 0 0.2 0.4 0.6 0.8 1 1.2 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) gain, power & noise figure vs. supply voltage @ 900 mhz [3] 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 hmc617lp3 / 617lp3e v02.0610 gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz output ip3 vs. rbias @ 900 mhz 22 24 26 28 30 32 34 36 38 40 1000 10000 vdd=3v vdd=5v ip3 (dbm) rbias (ohms) 500 12 13 14 15 16 17 0 0.2 0.4 0.6 0.8 1 1000 10000 vdd=5v vdd=3v gain (db) noise figure (db) rbias(ohms) 500 gain, noise figure & rbias @ 900 mhz output ip3 vs. rbias @ 700 mhz 22 24 26 28 30 32 34 36 38 40 1000 10000 vdd=3v vdd=5v ip3 (dbm) rbias (ohms) 500 13 14 15 16 17 18 19 0 0.2 0.4 0.6 0.8 1 1.2 1000 10000 vdd=5v vdd=3v gain (db) noise figure (db) rbias(ohms) 500 gain, noise figure & rbias @ 700 mhz vdd (v) rbias idd (ma) min max r ecommended 3v 1k [1] o pen circuit 2.7k 24 3.92k 30 4.7k 33 10k 40 5v 0 o pen circuit 820 65 2k 78 3.92k 88 10k 90 [1] w ith vdd= 3v and rbias < 1k o hm may result in the part becoming conditionally stable which is not recommended. absolute bias resistor range & recommended bias resistor values for idd
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 absolute maximum ratings drain bias voltage (vdd) +6v rf input p ower ( rfin) (vdd = +5 vdc) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 8.33 m w /c above 85 c) 0.54 w thermal r esistance (channel to ground paddle) 120 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s vdd (v) idd (ma) 2.7 18 3.0 30 3.3 41 4.5 77 5.0 88 5.5 97 note: amplifer will operate over full voltage ranges shown above. typical supply current vs. vdd (rbias = 3.92k) hmc617lp3 / 617lp3e v00.0807 gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c617 lp 3 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] 617 xxxx h m c617 lp 3 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] 617 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 hmc617lp3 / 617lp3e v02.0610 gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz pin number f unction description i nterface schematic 1, 3 - 5, 7, 9, 10, 12 - 14, 16 n/c no connection required. these pins may be connected to rf/ dc ground without affecting performance. 2 rfin this pin is matched to 50 o hms. 6 gnd this pin and ground paddle must be connected to rf ./dc ground. 11 rfout this pin is matched to 50 o hms. 8 res this pin is used to set the dc current of the amplifer by selection of external bias resistor. s ee application circuit. 15 vdd p ower s upply voltage. choke inductor and bypass capacitors are required. s ee application circuit. pin descriptions application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 hmc617lp3 / 617lp3e v02.0610 gaas smt phemt low noise amplifier, 0.55 - 1.2 ghz evaluation pcb i tem description j1, j2 p cb m ount sm a rf connector j3, j4 dc p in c1 10n f capacitor, 0402 p kg. c2 1000 p f capacitor, 0603 p kg. c3 0.47 f capacitor, 0603 p kg. l 1 18 nh, i nductor, 0603 p kg. l 2 15 nh, i nductor, 0402 p kg. r 1 3.92k o hm r esistor, 0402 p kg. u1 h m c617 lp 3( e ) amplifer p cb [2] 112580 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350. list of materials for evaluation pcb 118357 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request.
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